Dec 6 2004
Aviza Technology, a leading supplier of production-proven thermal process systems and an industry innovator in atomic layer deposition (ALD), today introduced Satin(TM), a low pressure chemical vapor deposition (LPCVD) process for depositing silicon nitride (SiN) at approximately 500 degrees C, an important capability for sub-90 nm semiconductor manufacturing. Satin's unique chemical characteristics, coupled with Aviza Technology's RVP-500 platform, achieve the thermal budget requirements for 90 nm and below device features. The RVP-500 combines the advantages of the reduced cycle times offered by single wafer tools and the lower cost of ownership (CoO) associated with batch furnaces.
The Satin process incorporates a proprietary precursor that eliminates the problems of chlorine (Cl) or carbon contamination in the SiN film and potential plasma damage. Air Liquide supplied the precursor material and worked with Aviza Technology to jointly develop the process.
"Satin, developed specifically for implementation on our RVP-500 platform, is a major step forward in advanced thermal processing," said May Su, vice president and general manager of Aviza Technology's thermal business unit. "Advancements such as lower chemical consumption rates to reduce process cost, cross flow capability and the flexibility to run variable load sizes up to 50 wafers underscore Aviza Technology's commitment to providing our global customers with advanced process solutions and high-productivity systems that drive down CoO."
Satin's near 500 degrees C process temperature is an important breakthrough for IC manufactures of logic, DRAM, flash, NAND and NOR devices at the 90 nm node and below. Sub-90 nm devices are facing severe demands for lower thermal budgets due to presence of advanced metal gates, nickel silicide and shallow junctions. The traditional dichlorosilane (DCS) ammonia (NH3) process for silicon nitride film deposition temperatures requires temperatures above 630 degrees C. Newer bis tertiary-butylamino silane (BTBAS) / NH3 process temperatures are at 570 degrees C or above. Both of these current processes inherently restrict ability to meet today's modern thermal budget, contamination and reduced plasma damage requirements for sub-90 nm film formation.
For more information on silicon nitride, click here.