Mar 23 2016
Fairchild, a leading global supplier of high-performance semiconductor solutions, today launched the flagship device of the company’s newest generation of 100V N-channel power MOSFETs, the FDMS86181 100V Shielded Gate PowerTrench® MOSFET.
The FDMS86181 is the first part in Fairchild’s new generation of PowerTrench MOSFETs and it delivers substantial improvements in efficiency, reduced voltage ringing and lower electromagnetic interference (EMI) for power supplies, motor drives and other applications requiring a 100V MOSFET.
The FDMS86181 100V Shielded Gate PowerTrench MOSFET
Fairchild was an early pioneer of the successful PowerTrench MOSFET nearly 25 years ago and this latest generation of PowerTrench devices continues to keep the company at the forefront of MOSFET technology development, ahead of competitors and able meet customers’ most demanding system power requirements.
“Our new 100V N-channel FET is a major advance over our previous, industry-leading generation of PowerTrench MOSFETs, and performs dramatically better than its competitors in virtually every performance category, from efficiency through reliability,” said Suman Narayan, Vice President and General Manager of Fairchild’s iFET business unit.
The primary advantages of the new FDMS86181 are its 40 percent reduction in Rdson which lowers conduction losses and its minimized gate charge (Qg) which reduces switching losses. The exceptionally low Qrr of the FDMS86181 virtually eliminates the voltage overshoots that cause ringing, which allows for the reduction or elimination of snubbers in product designs and reduces EMI. This unique advantage of the FDMS86181 allows designers to both reduce product size and bill-of-materials (BOM) costs.
Fairchild will demonstrate the performance of the new FDMS86181 100V Shielded Gate PowerTrench MOSFET at PCIM in Nuremberg, Germany booth 9/342, May 10-12.
Visit fairchildsemi.com/powertrench for samples and more information on the new 100V PowerTrench MOSFET.