A demanding analytical application within the semiconductor industry is that of monitoring the deposition of dielectrics such as BPSG. It requires both high measurement accuracy and excellent precision. One proven approach to meet these criteria is to use wavelength dispersive X-ray fluorescence (WDXRF). Regular analysis of films between 100 and 1250 nm is carried out for boron and phosphorus concentration. XRF not only facilitates the measurement of these dopant concentrations but also allows simultaneous determination of the BPSG film thickness.
This report discusses the reproducibility and long-term stability of the Malvern Panalytical 2830 ZT Wafer Analyzer to determine the boron and phosphorus concentration and film thickness of BPSG films. The gauge capability is shown as a function of process tolerance for the determination of the boron concentration.
Instrumentation
The ultimate sensitivity for boron was obtained using a Malvern Panalytical 2830 ZT equipped with fixed Si Kα and P Kα channels and a new generation extreme high-performance B Kα channel. Table 1 describes the measurement conditions.
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