Apr 19 2013
Topics Covered
Description
Applications
Chemical Properties
Electrical Properties
Thermal, Mechanical and Optical Properties
Safety Information
Description
Indium phosphide (InP) includes phosphorus and indium and is a binary semiconductor. It has a zincblende crystal structure similar to GaAs and almost all the III-V semiconductors.
Applications
Indium phosphide finds applications in the following:
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It has superior electron velocity due to which it is used in high-frequency and high-power electronics.
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It has a direct bandgap unlike many semiconductors hence is used for optoelectronics devices like laser diodes.
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Indium phosphide is also used as a substrate for optoelectronic devices based on epitaxial indium gallium arsenide.
Chemical Properties
The chemical properties of indium phosphide are provided in the table below:
|
Chemical Properties |
|
Chemical Formula |
InP |
|
Molecular Weight |
145.792 g/mol |
|
CAS No. |
22398-80-7 |
|
IUPAC Name |
Indium phosphide |
|
Group |
III-V |
|
Band Gap |
1.344 eV |
|
Band Gap Type |
Direct |
|
Crystal Structure |
Zinc Blende |
|
Symmetry Group |
Td2-F43m |
|
Lattice Constant |
5.8687 Angstroms |
Electrical Properties
The electrical properties of indium phosphide are provided in the table below:
|
Electrical Properties |
|
Intrinsic Carrier Concentration |
2x1016cm-3 |
|
Electron Mobility |
≤ 400cm2 V-1 s-1 |
|
Hole Mobility |
≤ 200 cm2 V-1 s-1 |
|
Electron Diffusion Coefficient |
≤ 130 cm2 s-1 |
|
Hole Diffusion Coefficient |
≤ 5 cm2 s-1 |
|
Electrical resistivity |
8.6x107Ωcm |
Thermal, Mechanical and Optical Properties
The thermal, mechanical and optical properties of indium phosphide are provided in the tables below:
|
Mechanical Properties |
|
Melting Point |
1062 °C |
|
Density |
4.81 g cm-3 |
|
Bulk Modulus |
7.1x1011 dyn cm-2 |
|
Thermal Properties |
|
Thermal Conductivity |
0.68 W cm-1 °C-1 |
|
Thermal Diffusivity |
0.372 cm2 s-1 |
|
Thermal Expansion Coefficient |
4.60x10-6 °C-1 |
|
Optical Properties |
|
Refractive Index (589 nm @ 293 K) |
3.1 |
|
Radiative Recombination Coefficient (@ 300 K) |
1.2x10-10 cm3 s-1 |
Safety Information
HMIS Hazard Rating:
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Health: 3 – Major injury likely unless medical action taken and prompt treatment given
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Flammability: 2 –Must be moderately heated or exposed to high
-
ambient temperature before ignition takes place
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Reactivity: 2 - May undergo violent chemicalchanges at normal temperature and pressure with low risk for explosion
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May react violently with water or form peroxides upon exposure to air.