Jul 30 2009
ASM International N.V. (NASDAQ: ASMI and Euronext Amsterdam: ASM), today announced that it has sold its Pulsar Atomic Layer Deposition (ALD) system for high-k gates to two top Japanese logic device manufacturers for insertion in the 32/28nm technology node. The tools will be used for hafnium-based high-k gate dielectrics, as well as for the dielectric capping layers used to tune work function of the gate stack. One customer also ordered ASM's EmerALD process module for metal gates.
"These orders further extend our leadership position in delivering manufacturing solutions for high-k gates, having now shipped well over 100 Pulsar ALD tools," said Bob Hollands, Director of Marketing for Transistor Products at ASM. "The performance benefits of high-k films deposited in the Pulsar, and our customer-focused approach that enables process integration solutions, were key factors in gaining these new customers. With process integration knowledge for high-k gates growing, we are seeing the adoption of high-k metal gates now accelerate rapidly. The combination of Pulsar and EmerALD demonstrates the benefit of ASM's capability to deposit in a clustered system the high-k film, the dielectric capping layer and the metal electrode."