Researchers from the University of Florida have found a way for large-scale production of graphene.
Silicon carbide (SiC) has been used by researchers in this novel method. SiC consists of carbon and silicon atoms. However, under extreme temperature up to 1300°C, the silicon atoms get vaporized leaving behind the carbon atoms, which grow into pure graphene sheets.
Earlier, scientists have tried using the thermal decomposition method to create graphene sheets and to etch desired patterns on the sheets according to the requirement of devices. However, the electron mobility of graphene can decrease as a result of chemical contaminants or defects during the etching process.
The new method enabled the research group to grow graphene and to produce tiny desired patterns, which were about 20 nm in size. The research team observed that gold or silicon ion implantation on SiC decreased the elevated temperature, the optimum temperature for graphene formation, by 100°C. The gold or silicon ions were implanted only on places where graphene layers were required and subsequently, SiC was heated to 1200°C. The researchers observed that graphene grew only on implanted regions and not on pure SiC. Therefore, the researchers were able to produce graphene nanoribbons through this method.
The study has been published in the journal Applied Physics Letters released by American Institute of Physics.
According to the researchers, the process could be refined further to produce graphene at low temperatures.