Applied Materials has announced that the company has introduced a new Applied Varian VIISta Trident system, which is an advanced single-wafer and high-current ion implant system in the semiconductor industry.
This new system embeds dopant atoms in order to engineer the chip’s electrical characteristics and is the only ion implanter that can potentially attain the yields required for making power-efficient and high-performance logic chips at the 20 nm node.
Major difficulties that obstruct the scaling of high-performance transistors are suppressing flaws during scaling, optimizing dopant activation, drain or source contact and junction regions, at the 20 nm node. The system has the exceptional potential to precisely modify the concentration of dopant and depth profile and this capability is significant to control leakage current, optimize performance and minimize variability in advanced devices.
Dual-magnet ribbon beam architecture plays a significant role in the system’s superior performance and may improve low energy performance of the system. High-energy, damaging species is eliminated by the energy purity module, which is capable of smearing the critical resistor channel. The current leakage is increased and the performance is degraded.
Production implants as low as -100°C has been enabled by the integrated cryogenic technology, which offers higher process control for use in transistor matching. This step is significant to develop embedded SRAM cells for use in on-chip cache memory, wherein every cell is made of six or eight transistors and may be matched accurately to facilitate reliable switching at low operating voltages that are necessary for mobile computing.
The company will introduce this new Trident system at SEMICON West 2012, which will be held from 10 to 12 July, 2012 in California.
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