Research & Development
Rubitec conducts customer-specific research and development projects in cooperation with RUBION. (Materials, silicon, silicon carbide, gallium arsenide, ..), doping of semiconductors with different elements (H, He, B, P ....), Material analyzes with ion beams, however also nuclear reaction analyzes to activate specific elements in samples. Another field is the support of semiconductor manufacturers in component or sensor development.
Specific knowledge of relevant funding programs can be used for financial support for research and development work.
High Energy Ion Implantation
Rubitec / RUBION carry out ion beam irradiation in the MeV area. A large spectrum of different ions is available. The available energy and dose range is dependent on the particular species and the wafer size. The maximum dose data in the table refer to 150 mm wafers.
Ion Beam Analysis
The various techniques of ion beam analysis have become more and more established for the non-destructive examination of thin films. With the wide range of ionic species and energy ranges, RUBION offers excellent possibilities to use the right technology.
RUBITEC / RUBION offer Rutherford Backscattering Spectroscopy (RBS), Nuclear Reaction Analysis (NRA), Deuteron Induced Gamma Emission (DIGE), and Proton Induced X-Ray Emission (PIXE).
We will be happy to advise you on the selection of the appropriate technology for the particular question.
Surface Modification
The properties of a material in the region close to the surface can be changed by ion irradiation. This is achieved by the introduction of special ions into the edge layers of the material or by special coatings of the material surface which are applied by suitable implantation methods. However, nanoporous metal surfaces can also be produced by implantation in which, for example, therapeutic active ingredients can be stored.
Applications are particularly found in medical technology, where the biocompatibility of products can be improved by surface modification.