Silicon Carbide (SiC) is highly wear resistant and also has good mechanical properties, including high temperature strength and thermal shock resistance. Silicon Carbide (SiC), as a technical ceramic, is produced in two main ways. Reaction bonded SiC is made by infiltrating compacts made of mixtures of Silicon Carbide (SiC) and Carbon with liquid Silicon. The Silicon reacts with the Carbon forming Silicon Carbide (SiC). The reaction product bonds the SiC particles. Sintered SiC is produced from pure SiC powder with non-oxide sintering aids. Conventional ceramic forming processes are used and the material is sintered in an inert atmosphere at temperatures up to 2000°C or higher.
Silicon Carbide (SiC) maintains its high mechanical strength in temperatures as high as 1,400. It has higher chemical corrosion resistance than other ceramics.
Silicon Carbide Properties
Provided in the table below are properties of grades of silicon carbide supplied by FELDCO INTERNATIONAL.
Properties |
Units |
Silicon Carbide 105
|
Silicon Carbide 106
|
Density |
g/cm3 |
3.15-3.20
|
3.17-3.20
|
Elastic Modulus |
(GPa) |
400-430
|
400-450
|
Weibull Modulus |
- |
12-15
|
12-18
|
Hardness |
HV(0.3) Kg/mm2 |
2300-2600
|
2300-2850
|
Fracture Toughness |
(MPa.m1/2) |
3.5-4.1
|
4.1-4.3
|
Thermal Expansion Coefficient |
10-6/°C; (RT - 1000°C) |
60-120
|
115-120
|
Thermal Conductivity |
W/m.K@25°C. |
60-120
|
60-120
|
Thermal Shock Parameter |
(°C) |
164-180
|
164-240
|
Electrical Resistivity |
(ohm-cm) |
100-106
|
107
|
This information has been sourced, reviewed and adapted from materials provided by FELDCO International.
For more information on this source please visit FELDCO International.