Apr 17 2009
Diodes Incorporated (Nasdaq:DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets, today announced the release of dual device MOSFET combinations in thermally efficient ultra small DFN packages for charging and switching applications in portable devices.
The DMS2220LFDB and DMS2120LFW co-package a 20V P-channel enhancement mode MOSFET with a companion diode in either a 2mm x 2mm DFN2020 or 3mm x 2mm DFN3020 package. The DMP2160UFDB co-packages two of the same MOSFETs in the DFN2020 format.
Compared to larger 3mm x 3mm footprint packages traditionally used in portable application designs, the DFN2020 utilizes 55 percent less PCB space. Additionally, with an off-board height of only 0.5mm, the package is also 50 percent thinner, suiting next-generation product design. The MOSFETs used in these packages feature low gate charge (Qg) and a typical R DS(ON), of 86m§Ù at V GS of 1.8V, ensuring that both switching and on state losses are minimized.
To further improve efficiency, the diode employed in these packages is the Company's own high performance SBR rectifier. With a typical low forward voltage of only 0.42V, the SBR offers a significant reduction in power dissipation compared to conventional Schottky diodes.