Renesas Electronics, a provider of semiconductor solutions, declared that it has fabricated a Schottky barrier diode (SBD), the RJS6005TDPP, which uses silicon carbide, a material that can be used in power semiconductor devices.
Supplemental Diagram Temperature Dependence of Forward Voltage. Credit Graphic Business Wire
The novel SiC Schottky barrier diode can be used in high-output electronic systems that include communication base stations, air conditioners and solar power arrays. The novel device uses technology developed by Hitachi together with Renesas Electronics, which enabled accomplishing around 40% lesser power consumption when compared to current power devices of Renesas Electronics that use conventional silicon (Si).
The significant features of the RJS6005TDPP SiC SBD include quicker switching speed for a 40% lesser loss when compared to current products. The SBD has a 15 ns reverse recovery time which ensures reduced power loss. There is no change in the reverse recovery time even when there is an increase in temperature, allowing consistently low switching loss while operating in environments of high-temperature. Its voltage rating is just 1.5 V, lesser than that of present Si rapid trigger diode products. Additionally, the temperature dependency is less, making sure that a stable forward voltage is seen even at high temperatures.
The RJS6005TDPP SiC SBD can be conveniently used as a substitute for conventional silicon diodes on present printed wiring boards.
The range of products from Renesas span from 3 A to 30 A, and have a 600 V voltage tolerance. These devices are developed in a way to satisfy the need for higher energy efficiency in high-output systems that include solar power arrays, air conditioners, and communication base stations.