Fujitsu Develop High Reliability Technology for GaN High Electron-Mobility Transistors

Fujitsu Laboratories Ltd. today announced the development of a new high-reliability technology for high power gallium nitride (GaN) (1)high electron-mobility transistors (HEMT)(2), paving the way for commercialization of high power GaN HEMTs. The new technology enables the transistors to operate even at the high temperature of 200 degrees Celsius for more than one million hours, equivalent to over 100 years, under pinch-off condition with a drain voltage of 50 volts (50V), thereby enabling the world's longest lifecycle for GaN HEMTs. Fujitsu will strive toward applying GaN HEMTs using this new technology for the high-speed wireless communications market, such as for satellite communication (VSATs), cellular base stations, WiMAX(3) base stations, and other high-speed wireless communications infrastructure.

Details of the new technology were presented at the 2007 IEEE MTT-S International Microwave Symposium (IMS).