PlasmaPro 100 ICPCVD for Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD)

With the use of high-density distant plasmas, which generate better film quality with less substrate damage, this ICPCVD process module is intended to make high-quality films at low growth temperatures.

Highlights

• Excellent uniformity, high throughput, and high precision processes
• High-quality films
• Wide temperature range electrode
• Compatible with all wafer sizes up to 200 mm
• Rapid change between wafer sizes
• Low cost of ownership and ease of serviceability
• Compact footprint, flexible layout
• Resistive heated electrodes with capability up to 400 °C or 1200 °C
• In-situ chamber cleaning and end-pointing
• Flexible vapor delivery module enabling deposition of films using liquid precursors, e.g., TiO₂ using TTIP, SiO₂ using TEOS

Applications

• At lower temperatures, excellent-quality, low-damage films are attainable
• SiO₂, Si₃N₄, SiON, Si, and SiC are common materials that are deposited at substrate temperatures as low as 5 ºC
• ICP source sizes of 65 mm, 180 mm, 300 mm deliver process uniformity up to 200 mm wafers
• Electrodes available for temperatures ranging from 5 ºC–400 ºC
• Patented ICPCVD gas distribution technology
• In situ chamber cleaning with endpointing