Jun 23 2010
The rapid evolution from cell phones to smart phones and mobile computing, use of netbooks, and more powerful personal computers is continuing to drive demand for Dynamic Random Access Memory (DRAM).
As DRAM performance can no longer be advanced solely by reducing feature size, integrated circuit manufacturers are now faced with the challenge of integrating materials with extremely high dielectric constants such as Strontium Titanium Oxide (STO). This allows the memory element to be shrunk and enables increasing amounts of data to be stored on each chip.
Earlier today, at the AVS 10th International Conference on Atomic Layer Deposition in Seoul, South Korea, Air Products (NYSE:APD) presented a paper entitled: Control of Strontium Titanate Films for Next Generation DRAM. The presentation was delivered by Dr. Laura Matz, technical manager for Advanced Memory Materials at Air Products. During the conference, Air Products also presented contributions describing the design of new Strontium and Titanium precursors, and the development of manufacturable delivery methods.
Air Products’ EXTREMA® STO Precursors have been evaluated within integrated capacitor structures and are able to achieve the target dielectric constants needed for 2x nm and further technology nodes. “By electrically testing the films deposited from Air Products Sr and Ti precursors, we were able to prove that our precursors are viable for the next generation of DRAM based on key electrical metrics,” said Dr. Matz. “When designing new precursors, it is important to understand the interplay between the structure of a precursor and its performance in depositing an acceptable thin film. Our strong synthetic team is constantly working to optimize precursor chemical structures to assure acceptable volatility and deposition performance within the process reactor.”
As part of the deposition process, Sr and Ti precursors are evaporated from either the solid or liquid phase and delivered in the gas phase to the deposition chamber. “Typically metalorganic precursors can be very challenging to deliver reliably. As part of our high-k precursor development program, we have established a test platform that enables us to study all aspects of chemical delivery in detail,” said Matz. “We are committed to providing products that address the challenges our customers face in developing this next generation of DRAM capacitors.”