Mar 14 2013
Today, ahead of the upcoming APEC Conference, Global Power Device, Inc. (GPD) announced a new line of Silicon Carbide (SiC) diodes that delivers ultra-high performance at prices that are competitive with conventional Silicon diodes.
The company's production-ready, 150mm Silicon Carbide Wafer processing technology reduces the cost of devices by up to 60%, making Silicon Carbide the value leader at the system level in Mid-voltage and High-voltage power applications.
Silicon Carbide is a next generation semiconductor material that possesses superior thermal and electrical properties. These properties enable higher reliability and significantly reduced power loss over silicon-based power systems. Silicon Carbide is seeing increased adoption in Mid-voltage and High-voltage power applications such as: Power Factor Correction, Electric/hybrid vehicles, Photo-Voltaic panels, Data centers, High-power industrial and Motor drives.
"The superior material properties of Silicon Carbide have been known for years. However, the high cost of manufacturing has restricted adoption to niche applications. Today, GPD's innovative approach unlocks the value of Silicon Carbide devices and provides a clear path for wide adoption," said Sung Joon Kim , CEO at Global Power Device, Inc. (GPD).
GPD has already demonstrated sample devices using the technology to key customers, and will be making its technology available to early partners in the first half of 2013.
Founded in 2010, Global Power Device, Inc. (GPD) is committed to revolutionizing power electronics by offering the best value in Silicon Carbide devices to enable new levels of energy efficiency and reliability.
GPD will have a demonstration of its devices for select customers during the 2013 Applied Power Electronics Conference (APEC) in Long Beach, CA. Customers should contact the company to arrange for a private demonstration.