Apr 23 2013
Vishay Intertechnology, Inc. today released a new n-channel TrenchFET® power MOSFET in the thermally enhanced PowerPAK® SO-8 package that extends the company's ThunderFET® technology to 150 V.
The Vishay Siliconix SiR872ADP offers low on-resistance of 18 milliohms at 10 V and 23 milliohms at 7.5 V while maintaining low gate charge of 31 nC typical at 10 V and 22.8 nC typical at 7.5 V.
The device released today is optimized for primary-side switching and secondary-side synchronous rectification in DC/DC converters, DC/AC inverters, and boost converters for telecom bricks, solar micro-inverters, and brushless DC motors. In these applications, the SiR872ADP offers 45 % lower on-resistance than previous-generation devices to reduce conduction losses and improve total system efficiency.
The SiR872ADP provides a low on-resistance times gate charge -- a key figure of merit (FOM) for MOSFETs in DC/DC converter applications -- of 563 milliohms-nC at 10 V and 524 milliohms-nC at 7.5 V. The device's FOM reduces conduction and switching losses to improve total system efficiency. By providing higher performance than multiple previous-generation devices, the MOSFET can potentially reduce overall component count and simplify designs.
The SiR872ADP is 100 % Rg- and UIS-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU. The device joins the recently released 100 V SiR846ADP and SiR870ADP and 80 V SiR826ADP ThunderFET MOSFETs, offering designers a variety of medium-voltage options in the PowerPAK SO-8 package. Vishay addresses the needs of all power conversion applications through its ThunderFET, TrenchFET Gen IV, and E/D Series MOSFETs.
Samples and production quantities of the new MOSFET are available now, with lead times of 13 to 14 weeks for large orders.