Semiconductor News

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Toshiba Develops Gallium Nitride Power FET with Superior Performance to Gallium Arsenide

Three World Leaders Sign MOU for Solar Energy Co-Operation

Improved Ferroelectric Materials Produced Using A Mechanical Activation Technique

New ECellAs Arsenic Cracker Source for Molecular Beam Epitaxy (MBE) from Oxford Instruments

New Composite Substrates Could Provide Cost Efficient Alternative to GaN for High RF Power Devices

Applied Materials to Acquire Brooks Software for $125 Million

Physicists Observe New Property of Matter

Physicists Observe Mechanism That Allows Semiconductors to Function as Novel Electronic Materials

Model for Determining Metal-Induced Reconstruction of Compound Semiconductor Surfaces

Can Conventional Semiconductors Learn New Tricks?

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