Dow Corning Awarded $4.2 Million to Develop Semiconducting Silicon Carbide Materials

Dow Corning Compound Semiconductor Solutions (DCCSS) has been awarded a $4.2 million contract from the U.S. Office of Naval Research to develop semiconductor silicon carbide (SiC) materials technology. The contract follows a previous $3.6 million contract awarded in December 2005, and allows DCCSS to continue developing its ability to manufacture device-quality SiC substrates up to 100mm in diameter.

SiC technology – which uses a man-made silicon and carbon compound with unique thermal and electrical properties as a substrate – is becoming increasingly important in the development of new high-frequency and more-efficient high-power electronics products. Some of its emerging uses are advanced radar systems, cell phone base stations, hybrid electric vehicles and power grid networks. Dow Corning is leveraging this federal funding, along with its own silicon manufacturing expertise, to accelerate the development of the SiC substrate market.

“The first phase of this program has met all its key objectives and advanced the technology of SiC significantly,” said James Helwick, global director, new business development programs, Advanced Technologies & Ventures Business for Dow Corning. “We’re expecting the second and later phases to help us further increase quality and reduce costs, which should pave the way for better-performing, more affordable SiC-based products that use even less energy.”

“SiC technology’s ultimate market success requires more than raw materials. Additional research and systems development also will be essential,” said Dow Corning Compound Semiconductor Solutions Chief Scientist Mark Loboda. “This program provides an ideal platform for government, leading academic research institutions and commercial organizations to collaborate and share resources to improve this promising technology.”

Dow Corning has been developing SiC technology since 2003, when it acquired SiC pioneer Sterling Semiconductor Inc. Dow Corning’s SiC development is underway at the company’s Auburn, Mich.-based manufacturing site, which it dedicated in 2004 following the launch of the DCCSS business.

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