Cree, semiconductor solutions provider for power and wireless applications, and Nippon Steel have signed silicon carbide (SiC) materials licensing contract.
As per the deal, Nippon Steel and its affiliates have received rights to produce and market SiC, a high-performance semiconductor material for use in electronic devices. Cree has also been offered rights to Nippon Steel’s patents related to SiC as part of the licensing agreement.
SiC is mainly used in the production of power, communication and lighting components that include RF power transistors, power switching devices and LEDs. Components made from SiC materials are employed in high-voltage power supplies, solar inverters and power conditioning.
Steve Kelley, CEO of Cree, stated that the company is an expert in SiC technologies that result in high brightness LEDs and energy-efficient power switching components. Cree is happy to partner with Nippon Steel for providing licensed SiC materials to the electronics device industry. The collaboration with Cree also supports Nippon Steel to reach its goal in the growing SiC market.