AKHAN Technologies and Argonne National Laboratory’s Center for Nanoscale Materials (CNM) have teamed up for the complete characterization of the innovative Miraj Diamond materials and devices.
AKHAN Tech. Miraj Diamond Wafer (Photo: Business Wire)
AKHAN Technologies recently revealed the commercialization of an advanced technique for doping n-type diamond, which was previously impossible in diamond. This breakthrough technology shows promise in transforming the present semiconductor market and future industries.
The joint project titled ‘Characterization of Novel N-type Nanocrystalline Diamond and Related Diode Devices’ is aimed at understanding n-type doped diamond thin films’ electronic properties using different nanoscale characterization methods available at CNM.
Adam Khan, Founder and Chief Executive Officer of AKHAN Technologies, stated that the company is happy to join forces with CNM Argonne. Europe is working on the delta doping method that requires very thick diamond over high-cost single crystal diamond carriers. Companies such as Element 6 De Beers commercially implemented this method. On the other hand, Japan has made huge investments in a technology roadmap to develop cost-efficient diamond on silicon microchip technology. However, this technology’s materials were useful only in extreme conditions such as high temperatures and with epitaxial diamond-on-diamond wafers, deployed by organizations such as Japan’s Nippon and National Institute of Science and Technology.
Khan claimed that it is the first worldwide demonstration of a fully functioning and highly producible diamond microchip. The objective of the collaboration with Argonne is to expand the availability of the characterization data to better understand the competitiveness of the United States in the international market.
CNM’s staff scientist, Dr. Sumant informed that the organization is elated to enable start-up companies such as AKHAN Technologies to access CNM’s advanced characterization facilities and expertise in the CVD-diamond field.