Jul 12 2005
Novellus Systems, Inc., the productivity and technology leader in advanced deposition, surface preparation and chemical mechanical planarization processes for the global semiconductor industry, today announced the introduction of INOVA NExT, a 300-mm metallization system for copper barrier/seed applications at 45-nm and beyond. An extension of Novellus’ successful INOVA platform, the INOVA NExT features advanced physical vapor deposition (PVD) technology, ion-induced atomic layer deposition (iALD), and a wide array of manufacturability innovations that further enhance the benchmark productivity already demonstrated at leading semiconductor companies around the world.
INOVA NExT improves defect performance, serviceability, user friendliness and reduces preventive maintenance (PM) time. The single target Hollow Cathode Magnetron (HCM) PVD technology has been extended to the 45-nm node. Barrier non-uniformity, sidewall asymmetry, and the etch-to-deposition ratio have all been improved, while the copper seed layer has lower overhang and increased sidewall coverage that enable fill of 45-nm structures. All these enhancements to INOVA NExT were made while maintaining the simplicity and production-worthiness of the HCM. This is in contrast to competing ionized PVD technologies where chambers are significantly more complex, leading to manufacturability issues.
In addition to PVD chambers, the INOVA NExT platform also enables integration of the iALD chamber. The iALD tantalum nitride (TaN) film replaces PVD TaN as the barrier layer for copper, providing a reduction in line resistance due to the highly conformal and ultra-thin nature of the film. Novellus’ patented iALD TaN process deposits a conducting film with a resistivity of less than 300 micro-Ohm-cm, in contrast to competing thermal ALD processes that deposit an insulator. The conducting barrier layer is critical for ease of integration into the copper interconnect, while demonstrating compatibility with ultra low-k (ULK) dielectrics. The iALD process can also be used to deposit other metals, such as ruthenium and copper, enabling an all-iALD copper barrier/seed. Multiple iALD TaN modules have been shipped to leading-edge customers.
“We continue to build market momentum in the PVD business through the success of the INOVA platform. By the end of 2005, we expect to triple the number of 300-mm INOVA customers compared to early 2004,” said Dr. Rao Mulpuri, vice president and general manager of Novellus’ Integrated Metals business unit. “HCM technology is now entering its fifth generation of use at 45-nm. In addition to lowering the additional capital outlay at technology transitions, the extendibility of the HCM allows our customers to preserve key process learning. The iALD technology provides unique technical capabilities for narrow line width devices beyond 45-nm and we are excited about the potential for this technology.”
The market for PVD systems is forecasted to reach around $1.2 billion per year in 2005 according to Gartner Dataquest. The copper version of INOVA NExT began shipping in Q1 2005. Aluminum and other applications will transition to the INOVA NExT in Q4 2005. The complete suite of INOVA NExT tools will enable Novellus to meet both the copper and aluminum needs of advanced logic, flash, ASIC and DRAM manufacturers as they shift to nodes of 45-nm and beyond.