Sep 26 2005
Cree has announced that it can now take orders for 100 mm (4-inch) n-type silicon carbide (SiC) substrates and epitaxy material. The current Cree standard for SiC is 3-inch diameter material. The announcement is being made at the International Conference on Silicon Carbide and Related Materials being held in Pittsburgh, PA.
SiC is a high performance semiconductor material used in the production of a broad range of power, light and communications components, including power switching devices, light emitting diodes (LEDs) and RF power transistors for wireless communications. Cree’s ability to produce single crystal SiC in the larger 100 mm format allows customers to potentially double the number of devices produced per wafer compared with current production on 3-inch material.
“Cree’s launch of 100 mm substrates and epitaxy establishes that SiC can be a high volume, production-oriented material within the semiconductor industry. It demonstrates Cree’s technology and commitment to develop material products targeted to the needs of the commercial market,” notes Lyn Rockas, Cree Materials general manager.
“Cree would like to acknowledge the significant support received from the Army Research Laboratory and the Defense Advanced Research Projects Agency (DARPA) in our efforts to develop 100 mm SiC substrates and epitaxy. We all benefit from the commercialization of this product,” notes John Palmour, Cree executive vice president of advanced devices.
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