Apr 25 2007
Applied Materials, Inc. launched its new Applied Centura® TetraTM III Advanced Reticle Etch, the only system that delivers the vital nanomanufacturing technology required for etching 45nm photomasks. The Tetra III controls trench depths across quartz masks to <10Å and reduces critical dimension (CD) loss to <10nm—enabling the use of alternating phase shift mask (PSM) and aggressive optical proximity correction techniques in customers’ most critical device layers. The system offers virtually-zero defect, high productivity etch processes for chrome, quartz, molybdenum silicon oxynitride (MoSiON) and various new materials for next generation lithography applications.
"The Tetra III system’s outstanding performance in advanced binary mask and PSM applications will be key to enabling customers’ 45nm-generation and beyond mask production," said Tom St. Dennis, senior vice president and general manager of Applied Materials' Etch, Cleans, Front End and Implant Products Groups. “More than ever before, applications are proliferating as the industry explores several potential solutions for next generation lithography. With its capability to etch the entire spectrum of photomask materials, the Tetra III system is well-positioned for all applications.”
The Applied Centura Tetra III system’s ultra-clean and extendible platform enables customers to etch the most advanced masks with the highest yields to date.