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  • Indium Gallium Aluminium Nitride (InGaAlN) Semiconductors
    Article - 14 Aug 2013
    Indium gallium aluminum nitride is generally prepared by epitaxial methods like pulsed-laser deposition, molecular beam epitaxy, etc. Addition of indium to the gallium nitride to form the...
  • Aluminium Gallium Indium Phosphide (AlGaInP) Semiconductors
    Article - 16 Aug 2013
    Aluminium gallium indium phosphide is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices as it span a direct bandgap...
  • Silver Gallium Sulfide (AgGaS2) Semiconductors
    Article - 22 Aug 2013
    Silver gallium sulfide has high short wavelength transparency edging at 550nm, excellent bulk quality across the transmission range, except for residual e-ray absorption centered at 1.8µm. Surface...
  • Copper Zinc Tin Sulfide (Cu2ZnSnS4) Semiconductors
    Article - 22 Aug 2013
    Copper zinc tin sulfide is a quaternary semiconducting compound that has favorable optical and electronic properties similar to copper indium gallium selenide. It can be obtained from chalcopyrite...
  • Copper Indium Gallium Selenide (CuInGaSe2) Semiconductors
    Article - 22 Aug 2013
    Copper indium gallide selenide is an I-III-VI semicondutor material composed of selenium, gallium, indium and copper. It is a tetrahedrally bonded semiconductor largely found in chalcopyrite mineral.
  • Lanthanum Calcium Manganate (LaCaMnO3) Semiconductors
    Article - 22 Aug 2013
    Lanthanum calcium manganate crystals have transition temperature that tends to increase at high doses of electron irradiation, which in turn stimulates persistence of magnetic polarons up to higher...
  • Lanthanum Copper Oxide (La2CuO4) Semiconductors
    Article - 15 Aug 2013
    Since the evolution of high temperature superconductors in cuprate systems, lanthanum copper oxide and related compounds having K2NiF4 structure appear as model materials for studying...
  • Gallium Arsenide Phosphide (GaAsP) Semiconductors
    Article - 15 Aug 2013
    Gallium arsenide phosphide is a semiconductor material and an alloy of gallium phosphide and gallium arsenide. It exists in various composition ratios denoted by x in its formula.
  • Aluminum Indium Arsenide (AlInAs) Semiconductors
    Article - 22 Aug 2013
    Aluminum indium arsenide, also called as indium aluminum arsenide, is a semiconductor material having larger bandgap and same lattice constant as that of GaInAs.
  • Aluminium Gallium Nitride (AlGaN) Semiconductors
    Article - 23 Aug 2013
    Aluminium gallium nitride is a semiconductor material and an alloy of aluminium nitride and gallium nitride. When grown on GaN, it gives rise to fixed charges at the interface stemming from...

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