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Results 17301 - 17310 of 19115 for Material properties
  • Article - 16 Aug 2013
    Aluminium gallium indium phosphide is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices as it span a direct bandgap...
  • Article - 22 Aug 2013
    Copper indium gallide selenide is an I-III-VI semicondutor material composed of selenium, gallium, indium and copper. It is a tetrahedrally bonded semiconductor largely found in chalcopyrite mineral.
  • Article - 22 Aug 2013
    Lanthanum calcium manganate crystals have transition temperature that tends to increase at high doses of electron irradiation, which in turn stimulates persistence of magnetic polarons up to higher...
  • Article - 15 Aug 2013
    Since the evolution of high temperature superconductors in cuprate systems, lanthanum copper oxide and related compounds having K2NiF4 structure appear as model materials for studying...
  • Article - 15 Aug 2013
    Gallium arsenide phosphide is a semiconductor material and an alloy of gallium phosphide and gallium arsenide. It exists in various composition ratios denoted by x in its formula.
  • Article - 20 Aug 2013
    Uranium dioxide is an oxide of uranium produced by reducing uranium trioxide with hydrogen. It is a black, radioactive, crystalline powder that naturally occurs in the mineral uraninite. It is capable...
  • Article - 10 Apr 2013
    American inventor Edward G. Acheson discovered silicon carbide (SiC) in 1891 when he attempted to create artificial diamonds.
  • Article - 9 Apr 2013
    Whether managing a marine vessel, truck or locomotive fleet, reliability engineers depend on oil analysis data to schedule maintenance actions.
  • Article - 21 Aug 2013
    Gallium selenide is a chemical compound having a hexagonal layer structure similar to that of gallium sulfide. It readily reacts with acids. Gallium selenide crystals are widely being used in...
  • Article - 15 Apr 2013
    Aluminum antimonide is a semiconductor of the group III-V family. It can be alloyed with other III-V semiconductor materials to produce aluminum arsenic antimonide, aluminum gallium antimonide, and...

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