A team of physicists has directly observed a reverse shock wave of light in a specially tailored structure known as a left-handed metamaterial. Although it was first predicted over forty years ago, this is the first unambiguous experimental demonstration of the effect.
3M India Ltd. today announced it will establish a new R&D facility in Bangalore to develop products for local markets and better connect technology to customers in India.
"Building this new innovation lab is...
Goodfellow Corporation of Oakdale, Pennsylvania, formerly a subsidiary of Goodfellow Cambridge Ltd., is now a fully autonomous U.S. company within the Goodfellow Group of Companies. In announcing the news, Stephen Alders...
The latest SKF rolling bearings and condition monitoring systems are playing a vital role in maximising the uptime of specialised precision devices used in the ISIS neutron and muon source at the Rutherford Appleton Laboratory in Oxfordshire.
Danish nanophysicists have developed a new method for manufacturing the cornerstone of nanotechnology research - nanowires. The discovery has great potential for the development of nanoelectronics and highly efficient so...
An annual award to help scientists commercialise early stage research and enable the exploitation of new and exciting ideas in the field of materials science has been launched.
The £25,000 Venture Prize has been...
Scientists at the California Institute of Technology (Caltech) have uncovered the physical mechanism by which arrays of nanoscale (billionths-of-a-meter) pillars can be grown on polymer films with very high precision, in potentially limitless patterns.
To power a very small device like a pacemaker or a transistor, you need an even smaller generator. The components that operate the generator are smaller yet, and the efficiency of those foundational components is critica...
Researchers from the MESA+ Institute for Nanotechnology at the University of Twente, The Netherlands, working with American researchers, have succeeded in using an electrical signal to control both the elastic and the magnetic properties of a nanomaterial at a very localized level.
HRL scientists announced today they have fabricated and demonstrated graphene-on-silicon field effect transistors (FETs) at full wafer scale-a revolutionary advancement in electronics that will enable unprecedented capabilities in high-bandwidth communications, imaging and radar systems.
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