Sunovia Energy Technologies, Inc. (OTC Bulletin Board: SUNV) and its partner EPIR Technologies, Inc. announced today the United States Department of Energy has awarded a second contract to EPIR Technologies to provide im...
Scientists at Rice University and North Carolina State University have found a method of attaching molecules to semiconducting silicon that may help manufacturers reach beyond the current limits of Moore's Law as they make microprocessors both smaller and more powerful.
The race is on for a successor to the popular ‘flash’ memory used in portable devices. European researchers think they have found a candidate in novel materials combined with a simple, easily fabricated ‘crossbar’ architecture.
The Chicago chapter of the Association for Women in Science (AWIS) granted its third annual Innovator Award to Tijana Rajh, group leader of the Nanobio Interfaces research group at Argonne National Laboratory's Centr...
CEA-Leti and MAPPER Lithography announce today that MAPPER has delivered one of its massively parallel electron beam platforms to CEA-Leti.
This delivery is part of the collaboration program between MAPPER and CEA-Le...
Sandia National Laboratories researchers - competing in an international pool that includes universities, start-ups, large corporations, and government labs - received five R+D 100 Awards this year.
R+D Magazine pres...
Scientists at Argonne National Laboratory's CNM Nanophotonics Group have measured how light emission from individual colloidal semiconductor nanocrystals, or quantum dots, is modified when in proximity to smooth metal films.
Applied Materials, Inc. today announced that its Applied SEMVision™ G4 Defect Analysis platform has been honored with the prestigious Editors' Choice Best Product Award by Semiconductor International (SI) magazine.
In its latest Quarterly OLED Shipment and Forecast Report, DisplaySearch forecasts the total OLED display market will grow to $7.1 billion by 2016, from $0.6 billion in 2008, with a CAGR of 36% (Figure 1).
IMEC presents innovations in dielectrics and metallization technologies as well as in their integration approaches. Great progress has been obtained in the metallization of 22nm interconnects, in Cu/low-k reliability assessment and in the suppression of low-k integration damage.
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