Feb 18 2009
IMEC technologists will present their newest breakthroughs in advanced semiconductor lithography research and development at next week's SPIE (www.spie.org) Advanced Microlithography Conference, to be held February 23 - 27 in San Jose, California.
IMEC will present a record 26 papers at the conference. The papers report progress realized by IMEC and its world-leading core partners on EUV and double patterning lithography targeting the sub-32nm node. The range of lithography challenges are covered, including materials, manufacturing process technology, metrology, inspection, process control, optical microlithography, design for manufacturing, and alternative lithographic processes.
"Stimulated by these record number of papers and with a concerted effort from all actors involved in double patterning and EUV lithography research, IMEC is determined to advance cost-effective double patterning towards the 32nm node and EUV full speed towards the (sub-)22nm node", stated Kurt Ronse, Advanced Lithography Program Director of IMEC. "SPIE provides the prestigious forum for the industry's technologists to share findings and move semiconductor manufacturing forward to accomplish this common service.
Kurt Ronse continued, "As technologists, our goal is to enable engineers and scientists to see their IC designs become reality through manufacturing. Through IMEC's collaborative research, we have achieved many milestones to discuss with our international colleagues."
IMEC's papers are as follows:
Advances in Resist Materials and Processing Technology XXVI
1. EUV resist requirements, absorbance and acid yield, Roel Gronheid,
IMEC (Belgium); Carlos Fonseca, Tokyo Electron America, Inc. (United States); Michael J. Leeson, Intel Corp. (United States); Jacob R. Adams, Jeffrey R. Strahan, C. Grant Willson, The Univ. of Texas at Austin (United States); Bruce W. Smith, Rochester Institute of Technology (United States)
2. Newly developed positive-tone resists for Posi/Posi double
patterning, Tsuyoshi Nakamura, Masaru Takeshita, Satoshi Maemori, Tokyo Ohka Kogyo Co., Ltd. (Japan); Ryusuke Uchida, Tokyo Ohka Kogyo America, Inc. (United States); Ryoichi Takasu, IMEC (Belgium); Katsumi Ohmori, Tokyo Ohka Kogyo Co., Ltd. (Japan)
3. Analysis of the effect of point-of-use filtration on microbridging
defectivity, Jennifer Braggin, Entegris, Inc. (United States); Roel Gronheid, Shaunee Y. Cheng, Dieter Van Den Heuvel, Sophie Bernard, Philippe Foubert, IMEC (Belgium); Craig A. Rosslee, SOKUDO USA, LLC (United States)
4. Integration of improved develop process for topcoat-less immersion
resists, Craig A. Rosslee, SOKUDO USA, LLC (United States); Philippe J.
Leray, David Laidler, IMEC (Belgium); Masahiko Harumoto, Akihiro Hisai, Michio Tanaka, SOKUDO Co., Ltd. (Japan); Glen Mori, SOKUDO USA, LLC (United
States)
5. EUV resist requirements: absorbance and acid yield, Roel Gronheid,
IMEC (Belgium); Carlos Fonseca, Tokyo Electron America, Inc. (United States); Michael J. Leeson, Intel Corp. (United States); Jacob R. Adams, Jeffrey R. Strahan, C. Grant Willson, The Univ. of Texas at Austin (United States); Bruce W. Smith, Rochester Institute of Technology (United States)
6. Fluorinated polymethacrylates as highly sensitive nonchemically
amplified e-beam resists, Jeffrey R. Strahan, The Univ. of Texas at Austin (United States); Jacob R. Adams, The Univ. of Texas at Austin (United
States) and IMEC (Belgium); Wei-Lun Jen, The Univ. of Texas at Austin (United States); Anja Vanlennhove, NXP Semiconductors (Belgium); Colin C.
Neikirk, Timothy Rochelle, The Univ. of Texas at Austin (United States); Roel Gronheid, IMEC (Belgium); C. Grant Willson, The Univ. of Texas at Austin (United States)
7. Calibration of physical resist models: methods, usability, and
predictive power, Ulrich K. Klostermann, Thomas Mülders, Denis Ponomarenco, Thomas Schmoeller, Synopsys GmbH (Germany); Jeroen Van de Kerkhove, Peter De Bisschop, IMEC (Belgium).
8. Statistical simulation of photoresists at EUV and ArF, John J.
Biafore, Mark D. Smith, KLA-Tencor Texas (United States); Jim W. Thackeray, Rohm and Haas Electronic Materials (United States); Stewart A. Robertson, KLA-Tencor Texas (United States); Roel Gronheid, IMEC (Belgium)
9. Resist fundamentals for resolution, LER, and sensitivity (RLS)
performance tradeoffs and the relation to microbridging defects, Benjamin M. Rathsack, Mark H. Somervell, Tokyo Electron America, Inc. (United States); Kathleen R. Nafus, Shinichi Hatakeyama, Tokyo Electron Kyushu Ltd.
(Japan); Roel Gronheid, Sophie Bernard, IMEC (Belgium)
Metrology, Inspection, and Process Control for Microlithography XXIII
10. A method to determine dose to target without metrology ambiguity
using model-based data analysis, Koen D'havé, Anne-Laure Charley, David Laidler, Shaunee Cheng, IMEC (Belgium)
11. A practical application of Multiple Prameters Profile
Characterization (MPPC) using CDSEM on production wafers using Hyper-NA Lithography, Toru Ishimoto, Hitachi High-Technologies Corp. (Belgium); Kohei Sekiguchi, Hitachi High-Technologies Europe GmbH (Germany); Norio Hasegawa, Kenji Watanabe, Hitachi High-Technologies Corp. (Japan); David Laidler, Shaunee Cheng, IMEC (Belgium)
12. Contour-quality assessment for OPC model calibration, Paul S.
Filitchkin, John L. Sturtevant, Ir Kusnadi, Thuy Do, Mentor Graphics Corp.
(United States); Peter De Bisschop, Jeroen Van de Kerkhove, IMEC (Belgium).
13. Track optimization and control for 32-nm node double patterning and
beyond, David Laidler, Philippe Foubert, Philippe J. Leray, Koen D'havé, IMEC (Belgium); Craig A. Rosslee, Len Tedeschi, Glen Mori, SOKUDO USA, LLC (United States)
14. Overlay metrology for double patterning processes, Philippe J.
Leray, David Laidler, Shaunee Cheng, IMEC (Belgium); Daniel Kandel, Michael E. Adel, Anat Marchelli, Anna Golotsvan, KLATencor Israel (Israel); Mauro Vasconi, Numonyx Srl (Italy); Bartlomiej W. Salski, QWED (Poland); Berta A.
Dinu, KLA-Tencor Israel (Israel)
15. Validation of CD-SEM etching residue evaluation technique for
MuGFET structures, Miki Isawa, Maki Tanaka, Tatsuya Maeda, Kenji Watanabe, Hitachi High-Technologies Corp. (Japan); Tom Vandeweyer, Nadine Collarert, Rita Rooyackers, IMEC (Belgium).
16. Diffraction-based overlay metrology: accuracy and performance on
multilevel measurements, Mauro Vasconi, Samuele Carrera, Flavio Paleari, Pierluigi Rigolli, Laura Rozzoni, Ermes Severgnini, Numonyx Srl (Italy); Philippe J. Leray, Shaunee Y. Cheng, IMEC (Belgium); Daniel Kandel, Michael E. Adel, Berta A. Dinu, KLA-Tencor Corp. (Israel); Bartlomiej W. Salski, QWED (Poland).
Optical Microlithography XXII
17. Extreme scaling of optical lithography: overview of process
integration issues (Keynote), Kurt G. Ronse, IMEC (Belgium)
To view all the papers being presented click here.