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The Fox Group Signs Another License Agreement for Its Silicon Carbide Semiconductor Technology

The Fox Group, Inc. is pleased to announce that it has entered into a patent license agreement with a U.S. corporation for rights to patents in Fox Group's portfolio.

This is the fourth non-exclusive and royalty-bearing license agreement Fox Group has signed for its patents related to silicon carbide, a compound semiconductor substrate material. Details of the patent license were not disclosed.

"Fox Group is pleased to sign another license under its patents," said Barney O'Meara, President & CEO. "Fox Group's key patents are for silicon carbide with low defect density, which is especially desirable for high power semiconductor devices, and LEDs, lasers, and RF devices, as well. At this time non-exclusive licenses are still available to companies in the silicon carbide industry worldwide. Since Fox Group is not making silicon carbide wafers or devices, we wish for the public to benefit from the Fox Group technology by the entire industry licensing our patents," said O'Meara.

Silicon carbide is used in the production of high performance power semiconductor devices and optoelectronics such as LEDs, lasers, RF transistors, detectors, MOSFETs, HEMTs, JFETs, BJTs, and Schottky barrier and PIN diodes, and is expected to play an increasingly important role in higher efficiency power conditioning systems for electric vehicles, photovoltaics, wind, and other renewable energy sources.

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