Fox Group Enter into Fifth Patent License Agreement for Silicon Carbide Technology

The Fox Group, Inc. is pleased to announce that it has entered into a patent license agreement with a non-U.S. company for rights to patents in Fox Group's portfolio. This is the fifth non-exclusive and royalty-bearing license agreement Fox Group has signed for its patents related to silicon carbide, a compound semiconductor substrate material. Details of the patent license were not disclosed.

"Having just signed the fourth license on February 14th, Fox Group is pleased to add this fifth license so soon thereafter," said Barney O'Meara, President & CEO. "Fox Group's key patents are for silicon carbide with low defect density, and our successful licensing activities confirm the value of our intellectual property. Non-exclusive licenses remain available, and we look forward to the balance of the industry taking licenses," said O'Meara.

Silicon carbide is used in the production of high performance power semiconductor devices and optoelectronics such as LEDs, lasers, RF transistors, detectors, MOSFETs, HEMTs, JFETs, BJTs, and Schottky barrier and PIN diodes, and is expected to play an increasingly important role in higher efficiency power conditioning systems for electric vehicles, photovoltaics, wind, and other renewable energy sources.

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