RF Micro Devices (RFMD) has introduced a highly-efficient gallium nitride (GaN) RF matched power transistor, RFHA1025.
This 280 W pulsed transistor provides better performance than competing silicon power products. The RFHA1025 transistor complements the newly introduced 380 W RF3928B, which is the highest power output S-Band device in the matched power transistor series offered by RFMD.
The RFHA1025 is based on the company’s advanced power dissipation and heat sink technologies and offers exceptional thermal conductivity and stability. It is available in a closed, flanged ceramic package. The 280-W pulsed GaN matched power transistor operates in frequencies ranging from 0.96 GHz to1.2 GHz and employs internal matching to minimize and simplify designers' circuits. In addition, it delivers high gain of over 14dB and high peak efficiency of more than 55%.
The company is improving its leadership status in the radar market by expanding its range of GaN-based power transistor devices across bands. The GaN matched power transistor devices increase overall ruggedness, decrease weight and size, and extend range in new and existing radar structures.
The company is looking forward to release additional GaN products in the future with rugged dependability, high power efficiency, and increased power density, stated Jeff Shealy, General Manager of Power Broadband Business Unit, RFMD.
RFMD is showcasing its GaNmatched power transistor range at the IEEE International Microwave conference, which will be held in Montreal, Canada till June 22, 2012.