Jul 18 2007
Air Products and Fujifilm Electronic Materials U.S.A., Inc. today announced that they have signed a sole licensing agreement for the Air Products' patented PDEMS(TM) interlayer dielectric (ILD) Process. The technology is designed to make a porous low-k dielectric material by plasma-enhanced chemical vapor deposition (PECVD).
The license agreement allows Fujifilm to supply the materials to semiconductor manufacturers that make use of Air Products' patented PDEMS(TM) ILD Process.
The PDEMS(TM) ILD Process, developed by Air Products, is a breakthrough process for making a porous low-k dielectric material by PECVD. As claimed in US Patent numbers 6,583,048 and 6,846,515, the organosilicate structure of the film is created using a diethoxymethylsilane precursor, referred to as a "structure former." Pores are imparted to the film by employing a hydrocarbon-based precursor known as a "porogen" that co-deposits during the growth of the film. Pores are created by removing the porogen using various post-treatment processes.
Under the license agreement, Air Products will continue to sell DEMS(TM) (diethoxymethylsilane) and porogens for use in the PDEMS(TM) ILD Process. Fujifilm Electronic Materials U.S.A. will sell its own D-MEOS(TM) (diethoxymethylsilane) and porogens for use in the PDEMS(TM) ILD Process. Both companies will interface directly with customers in selling the precursors used in the patented process.
"Our customers have challenged material suppliers to step up and help them continue the historical rate of roadmap progress. The creation of Air Products' PDEMS(TM) ILD Process is a response to this challenge," said Corning Painter, vice president of Electronics, for Air Products. “Our agreement with Fujifilm is a commitment by Air Products and Fujifilm to provide semiconductor manufacturers the ability to easily access this material technology anywhere in the world.”