Aug 16 2007
Kyma Technologies, Inc., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services announced the new availability of 25mm x 25mm native semi-insulating GaN (SI GaN) substrates. This new product represents a natural addition to Kyma’s native SI GaN substrate product line, which also includes 10mm x 10mm and 18mm x 18mm substrates.
Dr. Edward Preble, Kyma’s Chief Operating Officer, commented, “We are pleased to offer larger native SI GaN to our customers including many who are developing better and more reliable high frequency high power GaN transistors. Our 25mm x 25mm native SI GaN product has excellent resistivity properties just like our smaller SI GaN substrates, as corroborated by recent electrical resistivity mapping measurements carried out by Tim Bogart, one of our collaboration partners at the Electro-Optics Center (EOC) of Penn State University. The larger size and availability are the results of yield improvements in our native SI GaN boule growth and wafering processes. We have also produced limited quantities of 30mm x 30mm high quality native SI GaN substrates and plan to announce their availability in the coming months.”
Kyma’s improved SI GaN product line has benefited from strong financial support from the US Air Force and US Missile Defense Agency (MDA) and from collaborative partnerships in SI GaN related materials and devices including EOC, US Air Force Research Laboratory (AFRL), US Naval Research Laboratory (NRL), and US Naval Surface Weapons Center (NSWC).
Dr. Drew Hanser, Kyma’s Chief Technology Officer, added, “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a larger albeit square substrate. Our larger square SI GaN substrates are natural byproducts of our ongoing efforts, supported by the US Missile Defense Agency (MDA) and US Air Force Research Laboratory, to develop round three-inch and four-inch native SI GaN substrates.”
The electrical characteristics of Kyma’s SI GaN will be the topic of a joint AFRL-Kyma authored paper entitled “Electrical Properties and Deep Centers in Semi-Insulating Fe-Doped Native GaN Substrates Grown by Hydride Vapor Phase Epitaxy” which will be presented on September 24th in Las Vegas, Nevada, USA, at the 7th International Conference of Nitride Semiconductors (ICNS-7).