The STW-10 automated plasma system has been crafted specifically for front-end semiconductor processing. It is the ideal tool for activating silicon surfaces prior to hybrid wafer bonding. The STW-10 accepts FOUPs containing 300 mm wafers or cassettes with dies on a tape frame. In terms of maximum throughput, the system can handle up to 60 wafers per hour.
Inside the STW-10, the Atomflo™ plasma system forges a uniform, particle-free, electrically neutral discharge that ensures no damage to CMOS integrated circuits. The hydrogen/argon plasma removes metal oxidation from copper, tin, and indium, while the oxygen/argon plasma strips away organic contamination.
The STW-10 has all the required features for effective modern semiconductor fabrication:
- Carrier RFID or barcode recognition
- Cleanroom class 10 (ISO 4)
- EFEM prepared for OHT or AGV factory handling
- Meets all SEMI standards
- SECS/GEM ready
- Wafer alignment and carrier mapping
Image Credit: Surfx Technologies, LLC
STW-10 Specifications
- Wafer Size Options: 300 mm, 200 mm, 150 mm
- Footprint (W * D * H): 2,024 × 2,900 × 2,180 mm, 79.7 × 114.2 × 85.8 inches
- Product handling: FOUP, cassette, or both, Wafer, tape frame, or both
- Patented plasma technology:
- RF capacitive discharge
- O2, H2, N2 plasma chemistry
- Atmospheric argon plasma
The STW-10 is developed for precise plasma cleaning of semiconductor wafers, ensuring low damage, outstanding dependability, and traceability.
Source: Surfx Technologies, LLC
| Facilities |
| Power supply |
380 VAC, 3 P/N/PE, 25 A, 50/60 Hz |
| Normal power consumption |
6 kW |
| Air supply (CDA) |
0.4-0.6 MPa (60-90 psig), <280 LPM (<10 CFM) |
| Vacuum |
450 – 600 mm Hg (17 – 24 inches Hg), 2 – 3.5 CMH (1.2 – 2.1 CFM) |
| Footprint (W*D*H) |
2,024 x 2,900 x 2,180 mm (80 x 114 x 86 inches) |
| Weight |
2,200 kg (4,850 lbs) |
| Exhaust (flange, factory flow required) |
Qty two 100 mm diameter, combined 600 CMH (350 CFM) |
| Machine specifications |
| Wafer size options |
300 mm, 200 mm, 150 mm |
| Traceability |
RFID, character recognition, barcode scan carriers and substrates |
| Automated loader |
Dual FOUP, dual cassettes, or mixed |
| Carrier mapping |
Yes |
| Substrate handling |
EFEM, OHT, AGV ready |
| Factory communication |
SECS/GEM |
| Atomflo™ plasma specifications |
| RF Power |
600 W at 27.12 MHz |
| Main plasma gas |
Argon (Ar) |
| Process gases |
Oxygen (O2), nitrogen (N2), or hydrogen (5.0 % H2 in Ar) |
| Process specifications |
| Nominal contact angle after plasma |
WCA < 10⁰ (native oxide on silicon wafer) |
| Plasma cleaning process |
O2 + Ar to remove organics, or H2 + Ar to remove metal oxidation |
Image Credit: Surfx Technologies, LLC