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  • Article - 14 Aug 2013
    Iron disulfide is a chemical compound with the chemical formula FeS2. It has a cubic structure which is among the first crystal structures solved by X-ray diffraction.
  • Article - 22 Aug 2013
    Copper indium gallide selenide is an I-III-VI semicondutor material composed of selenium, gallium, indium and copper. It is a tetrahedrally bonded semiconductor largely found in chalcopyrite mineral.
  • Article - 16 Aug 2013
    Tin dioxide is an inorganic compound with the chemical formula SnO2. It mainly occurs in the mineral, cassiterite. It is a colorless, amphoteric and diamagnetic solid that is usually considered as an...
  • Article - 20 Aug 2013
    Bismuth iodide is an inorganic compound with the chemical formula BiI3. It occurs as gray-black solid and adopts a distinctive crystal structure having iodide centers at a hexagonally closest-packed...
  • Article - 21 Aug 2013
    Gallium selenide is a chemical compound having a hexagonal layer structure similar to that of gallium sulfide. It readily reacts with acids. Gallium selenide crystals are widely being used in...
  • Article - 21 Aug 2013
    Copper indium gallide selenide (CIGS) is an I-III-VI semiconductor material composed of selenium, gallium, indium and copper. It is a tetrahedrally bonded semiconductor largely found in chalcopyrite...
  • Article - 15 Apr 2013
    Aluminum antimonide is a semiconductor of the group III-V family. It can be alloyed with other III-V semiconductor materials to produce aluminum arsenic antimonide, aluminum gallium antimonide, and...
  • Article - 11 Apr 2013
    Cadmium telluride is a crystalline compound formed from cadmium and tellurium. It is sandwiched with calcium sulfide to form a p-n junction photovoltaic solar cell.
  • Article - 19 Apr 2013
    Cadmium sulfide is an inorganic compound with the chemical formula CdS. It is a yellow solid and a semiconductor of electricity. It occurs in nature with two different polymorphs, cubic hawleyite and...
  • Article - 2 May 2013
    Aluminium gallium arsenide AlxGa1-xAs) is a semiconductor material having almost the same lattice constant as gallium arsenide but a bigger bandgap.

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